Infineon with breakthrough semiconductor manufacturing technology
Are we in for a revolution in the semiconductor market? It’s possible. Germany boasts mass production of GaN wafers, which are supposed to be similarly priced to silicon.
German Infineon Technologies AG announced the development of the world’s first technology for producing 300 mm diameter wafers gallium nitride (GaN). The company is a pioneer in this field, achieving success in large-scale production. The new technology has accelerate the development of the semiconductor market.
The first GaN wafers will be shown in November
GaN-based semiconductors are found increasingly widespread use in industryautomotive, and consumer devices. They are used in AI power supplies, solar inverters, smartphone and laptop chargers, and motor control systems, among others.
Infineon has so far implemented production of 300 mm GaN wafers in the pilot program on the lines in the plants located in Villach, in Austria. This experience is intended to provide scaling of processing capacity and gaining an advantage in the market, the value of which may reach by the end of this decade several billion dollars. Germany to showcase first 300mm GaN wafers at trade show in November 2024 year in Munich.
One of the key advantages of the new technology is possibility of using existing equipmentdue to the similarity of the production processes. This is to allow for quick implementation on many existing lines, and thus equalization of prices with the production of existing silicon wafers.
